Epitaxial Structures of Band-Gap-Engineered α-(CrxFe1-x)2O3(0 ≤x≤1) Films Grown onC-Plane Sapphire
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
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1. Band alignment at β-(AlxGa1−x)2O3/β-Ga2O3 (100) interface fabricated by pulsed-laser deposition;Applied Physics Letters;2018-06-04
2. Critical Review—Photocurrent Spectroscopy in Corrosion and Passivity Studies: A Critical Assessment of the Use of Band Gap Value to Estimate the Oxide Film Composition;Journal of The Electrochemical Society;2017
3. Boundary magnetization properties of epitaxialCr2−xAlxO3thin films;Physical Review B;2015-06-02
4. Epitaxial growth of corundum-structured wide band gap III-oxide semiconductor thin films;Journal of Crystal Growth;2014-09
5. Surface structure of α-Cr2O3(0001) after activated oxygen exposure;Surface Science;2013-12
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