Epitaxial growth of corundum-structured wide band gap III-oxide semiconductor thin films-Reference-Cited by-同舟云学术

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Epitaxial growth of corundum-structured wide band gap III-oxide semiconductor thin films

Published:2014-09 Issue: Volume:401 Page:588-592
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Fujita Shizuo,Kaneko Kentaro

Funder

New Energy and Industrial Technology Development Organization

Japan Society for the Promotion of Science

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference61 articles.

1. Room temperature excitonic stimulated emission from zinc oxide epilayers grown by plasma-assisted MBE

2. MBE growth and properties of ZnO on sapphire and SiC substrates

3. Single-Crystalline ZnO Films Grown on (0001)Al2O3 Substrate by Electron Cyclotron Resonance-Assisted Molecular Beam Epitaxy Technique

4. Optically pumped lasing of ZnO at room temperature

5. Growth of ZnO Thin Film by Laser MBE: Lasing of Exciton at Room Temperature

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