Tilted Domain and Indium Content of InGaN Layer onm-Plane GaN Substrate Grown by Metalorganic Vapor Phase Epitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference18 articles.
1. Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect
2. Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells
3. Improved characteristics and issues of m-plane InGaN films grown on low defect density m-plane freestanding GaN substrates by metalorganic vapor phase epitaxy
4. Strain relaxation mechanism of InGaN thin film grown on m -GaN
5. Impact of Substrate Miscut on the Characteristic ofm-plane InGaN/GaN Light Emitting Diodes
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Influence of substrate misorientation on the emission and waveguiding properties of a blue (In,Al,Ga)N laser-like structure studied by synchrotron radiation microbeam X-ray diffraction;Photonics Research;2021-02-10
2. Above 25 nm emission wavelength shift in blue-violet InGaN quantum wells induced by GaN substrate misorientation profiling: towards broad-band superluminescent diodes;Optics Express;2020-07-15
3. Impact of growth conditions and strain on indium incorporation in non-polar m-plane (101¯0) InGaN grown by plasma-assisted molecular beam epitaxy;APL Materials;2019-12-01
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