Memory Conductance Switching in a Ni–Ti–O Compound Thin Film-Reference-Cited by-同舟云学术

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Memory Conductance Switching in a Ni–Ti–O Compound Thin Film

Published:2012-10-01 Issue:10R Volume:51 Page:104102
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Inamdar Akbar I.,Kim Jongmin,Jang Byeonguk,Kim Duhwan,Im Hyunsik,Jung Woong,Kim Hyungsang

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference35 articles.

1. Effect of annealing on charge transfer in Ge nanocrystal based nonvolatile memory structure

2. Fast phase transitions induced by picosecond electrical pulses on phase change memory cells

3. Toward a Universal Memory

4. Multi-layer stackable polymer memory devices

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1. Phase and Orientation Control of NiTiO3 Thin Films;Materials;2019-12-25

2. Effects of Gibbs free energy difference and oxygen vacancies distribution in a bilayer ZnO/ZrO2 structure for applications to bipolar resistive switching;Applied Surface Science;2019-12

3. Impact of work function on the resistive switching characteristics of M/ZnO/CeO2/Pt devices;Materials Research Express;2017-05-16

4. Switching Power Universality in Unipolar Resistive Switching Memories;Scientific Reports;2016-04

5. Effect of Electronegativity on Bipolar Resistive Switching in a WO3-Based Asymmetric Capacitor Structure;ACS Applied Materials & Interfaces;2016-03-29

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