Switching Power Universality in Unipolar Resistive Switching Memories-Reference-Cited by-同舟云学术

Switching Power Universality in Unipolar Resistive Switching Memories

Published:2016-04 Issue:1 Volume:6 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Kim Jongmin,Jung Kyooho,Kim Yongmin,Jo Yongcheol,Cho Sangeun,Woo Hyeonseok,Lee Seongwoo,Inamdar A. I.,Hong Jinpyo,Lee Jeon-Kook,Kim Hyungsang,Im Hyunsik

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep23930.pdf

Reference42 articles.

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2. Jeong, D. S., Schroeder, H. & Waser, R. Mechanism for bipolar switching in a Pt/TiO2/Pt resistive switching cell. Phys. Rev. B 79, 195317 (2009).

3. Akinaga, H. & Shima, H. Resistive random access memory (ReRAM) based on metal oxides. Proceedings of the IEEE. 98, 2237–2251 (2010).

4. Waser, R., Dittmann, R., Staikov, G. & Szot, K. Redox-based resistive switching memories – nanoionic mechanisms, prospects, and challenges. Adv. Mater. 21, 2632–2663 (2009).

5. Sawa, A. Resistive switching in transition metal oxides. Mater. Today 11, 28–36 (2008).

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