Effect on Critical Dimension Performance for Carbon Contamination of Extreme Ultraviolet Mask Using Coherent Scattering Microscopy andIn-situContamination System-Reference-Cited by-同舟云学术

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Effect on Critical Dimension Performance for Carbon Contamination of Extreme Ultraviolet Mask Using Coherent Scattering Microscopy andIn-situContamination System

Published:2012-06-01 Issue:6S Volume:51 Page:06FB04
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Doh Jonggul,Lee Sangsul,Lee Jaewook,Hong Seongchul,Jeong Chang Young,Lee Dong Gun,Kim Seong-Sue,Ahn Jinho

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference32 articles.

1. Carbon contamination of EUV mask: film characterization, impact on lithographic performance, and cleaning

2. Cleaning of extreme ultraviolet lithography optics and masks using 13.5 nm and 172 nm radiation

3. Accelerated lifetime metrology of EUV multilayer mirrors in hydrocarbon environments

4. Lifetime of EUVL masks as a function of degree of carbon contamination and capping materials

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Through-pellicle imaging of extreme ultraviolet mask with extreme ultraviolet ptychography microscope;Journal of Micro/Nanolithography, MEMS, and MOEMS;2019-09-28

2. Contamination Removal From UV and EUV Photomasks;Developments in Surface Contamination and Cleaning, Volume 9;2017

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