Effects of trench profile and self-aligned ion implantation on electrical characteristics of 1.2 kV 4H-SiC trench MOSFETs using bottom protection p-well-Reference-Cited by-同舟云学术

Effects of trench profile and self-aligned ion implantation on electrical characteristics of 1.2 kV 4H-SiC trench MOSFETs using bottom protection p-well

Published:2018-05-23 Issue:6S1 Volume:57 Page:06HC07
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Seok Ogyun^ORCID,Ha Min-Woo,Kang In Ho,Kim Hyoung Woo,Kim Dong Young,Bahng Wook

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/57/i=6S1/a=06HC07/pdf

Reference30 articles.

1. Step-controlled epitaxial growth of SiC: High quality homoepitaxy

2. S-Band Operation of SiC Power MESFET With 20 W (4.4 W/mm) Output Power and 60% PAE

3. Thermal Conductivity of Pure and Impure Silicon, Silicon Carbide, and Diamond

4. Fundamentals of Power Semiconductor Devices

5. Radiation-induced defects in SiC-MESFETs after 2-MeV electron irradiation

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design of 1.2 kV SiC trench MOSFET using tilted ion implantation for suppression of electric field crowding at the bottom of the gate oxide;Japanese Journal of Applied Physics;2023-01-01

2. Effect of P+ Source Pattern in 4H-SiC Trench-Gate MOSFETs on Low Specific On-Resistance;Applied Sciences;2022-12-22

3. Analysis of Electrical Characteristics in 4H-SiC Trench-Gate MOSFETs with Grounded Bottom Protection p-Well Using Analytical Modeling;Applied Sciences;2021-12-18

4. 1200V 4H-SiC trench MOSFET with superior figure of merit and suppressed quasi-saturation effect;Microelectronics Reliability;2021-08

5. Effects of junction profiles in bottom protection p-well on electrical characteristics of 1.2 kV SiC trench-gate MOSFETs;The European Physical Journal Applied Physics;2019-12