1200V 4H-SiC trench MOSFET with superior figure of merit and suppressed quasi-saturation effect-Reference-Cited by-同舟云学术

1200V 4H-SiC trench MOSFET with superior figure of merit and suppressed quasi-saturation effect

Published:2021-08 Issue: Volume:123 Page:114249
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Fu Hao,Wei Zhaoxiang,Liu Siyang,Wei Jiaxing,Xu Hang,Ni Lihua,Yang Zhuo,Sun Weifeng

Funder

National Key Research and Development Program of China

Transformation Program of Scientific and Technological Achievements of Jiangsu Province

National Natural Science Foundation of China

Southeast University

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. High performance SiC trench devices with ultra-low ron;Nakamura,2011

2. A SiC Trench MOSFET concept offering improved channel mobility and high reliability;Siemieniec,2017

3. Self-aligned formation of the trench bottom shielding region in 4H-SiC trench gate MOSFET;Kojima;Jpn. J. Appl. Phys.,2016

4. Effects of trench profile and self-aligned ion implantation on electrical characteristics of 1.2 kV 4H-SiC trench MOSFETs using bottom protection p-well;Seok;Jpn. J. Appl. Phys.,2018

5. Introduction of depletion stopper for reduction of JFET resistance for 4H-SiC trench MOSFET;Kagawa;Mater. Sci. Forum,2015

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