Analysis of Electrical Characteristics in 4H-SiC Trench-Gate MOSFETs with Grounded Bottom Protection p-Well Using Analytical Modeling

Author:

Jeong Jee-Hun,Seok Ogyun,Lee Ho-Jun

Abstract

A new analytical model to analyze and optimize the electrical characteristics of 4H-SiC trench-gate metal-oxide-semiconductor field-effect transistors (TMOSFETs) with a grounded bottom protection p-well (BPW) was proposed. The optimal BPW doping concentration (NBPW) was extracted by analytical modeling and a numerical technology computer-aided design (TCAD) simulation, in order to analyze the breakdown mechanisms for SiC TMOSFETs using BPW, while considering the electric field distribution at the edge of the trench gate. Our results showed that the optimal NBPW obtained by analytical modeling was almost identical to the simulation results. In addition, the reverse transfer capacitance (Cgd) values obtained from the analytical model correspond with the results of the TCAD simulation by approximately 86%; therefore, this model can predict the switching characteristics of the effect BPW regions.

Funder

The korea Institute for advancement of Technology (KIAT) grant funded by the Korea Government

Publisher

MDPI AG

Subject

Fluid Flow and Transfer Processes,Computer Science Applications,Process Chemistry and Technology,General Engineering,Instrumentation,General Materials Science

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