Author:
Jeong Jee-Hun,Seok Ogyun,Lee Ho-Jun
Abstract
A new analytical model to analyze and optimize the electrical characteristics of 4H-SiC trench-gate metal-oxide-semiconductor field-effect transistors (TMOSFETs) with a grounded bottom protection p-well (BPW) was proposed. The optimal BPW doping concentration (NBPW) was extracted by analytical modeling and a numerical technology computer-aided design (TCAD) simulation, in order to analyze the breakdown mechanisms for SiC TMOSFETs using BPW, while considering the electric field distribution at the edge of the trench gate. Our results showed that the optimal NBPW obtained by analytical modeling was almost identical to the simulation results. In addition, the reverse transfer capacitance (Cgd) values obtained from the analytical model correspond with the results of the TCAD simulation by approximately 86%; therefore, this model can predict the switching characteristics of the effect BPW regions.
Funder
The korea Institute for advancement of Technology (KIAT) grant funded by the Korea Government
Subject
Fluid Flow and Transfer Processes,Computer Science Applications,Process Chemistry and Technology,General Engineering,Instrumentation,General Materials Science
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献