Thin film transistor performance of amorphous indium–zinc oxide semiconductor thin film prepared by ultraviolet photoassisted sol–gel processing
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/57/i=5S/a=05GD01/pdf
Reference31 articles.
1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
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4. Investigation on doping dependency of solution-processed Ga-doped ZnO thin film transistor
5. Effects of channel stoichiometry and processing temperature on the electrical characteristics of zinc tin oxide thin-film transistors
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2. Effect of Hf doping content on the structure, optical and electrical properties of flexible Hf Zn1-O thin films by sol-gel method;Materials Science in Semiconductor Processing;2021-01
3. Preparation of a-IZO thin films by RF magnetron sputtering for Cu (In, Ga) Se2 solar cells;Journal of Physics: Conference Series;2020-06-01
4. X-ray photoelectron spectroscopy analysis of the effect of photoresist passivation on InGaZnO thin-film transistors;Applied Surface Science;2019-03
5. Solution-processed high-mobility ZnO thin film transistors based on multiple-stacked channel layer doped with Hf and Mg;Superlattices and Microstructures;2018-08
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