Analytical drain current model for symmetric dual-gate amorphous indium gallium zinc oxide thin-film transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/57/i=1/a=014301/pdf
Reference35 articles.
1. Unified Analytic Model for Current–Voltage Behavior in Amorphous Oxide Semiconductor TFTs
2. Chitosan-gated low-voltage transparent indium-free aluminum-doped zinc oxide thin-film transistors
3. A Compact SPICE Model for Organic TFTs and Applications to Logic Circuit Design
4. Double gate GaInZnO thin film transistors
5. Double-layered vertically integrated amorphous-In2Ga2ZnO7 thin-film transistor
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1. An Analytical Surface Potential and Effective Charge Density Approach Based Drain Current Model for Amorphous InGaZnO Thin-Film Transistors;Coatings;2023-02-13
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3. Advancements for organic thin film transistors: Structures, materials, performance parameters, influencing factors, models, fabrication, reliability and applications;Materials Science in Semiconductor Processing;2021-10
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