InGaN Channel High-Electron-Mobility Transistors with InAlGaN Barrier andfT/fmaxof 260/220 GHz-Reference-Cited by-同舟云学术

InGaN Channel High-Electron-Mobility Transistors with InAlGaN Barrier andfT/fmaxof 260/220 GHz

Published:2013-01-01 Issue:1 Volume:6 Page:016503
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Wang Ronghua,Li Guowang,Karbasian Golnaz,Guo Jia,Faria Faiza,Hu Zongyang,Yue Yuanzheng,Verma Jai,Laboutin Oleg,Cao Yu,Johnson Wayne,Snider Gregory,Fay Patrick,Jena Debdeep,Xing Huili (Grace)

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/6/i=1/a=016503/pdf

Reference23 articles.

1. InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz

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