Nonvolatile Polycrystalline-Silicon Thin-Film-Transistor Silicon–Oxide–Nitride–Oxide–Silicon Memory with Periodical Finlike Channels Fabricated Using Nanoimprint Technology
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/6/i=2/a=024201/pdf
Reference20 articles.
1. Scalable 3-D Fin-Like Poly-Si TFT and Its Nonvolatile Memory Application
2. Embedded TFT nand-Type Nonvolatile Memory in Panel
3. Nonvolatile polycrystalline silicon thin-film-transistor memory with oxide/nitride/oxide stack gate dielectrics and nanowire channels
4. Novel Twin Poly-Si Thin-Film Transistors EEPROM With Trigate Nanowire Structure
5. Electric-Field Enhancement of a Gate-All-Around Nanowire Thin-Film Transistor Memory
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Poly-Si Thin-Film Transistors with N-Type Line-Array Doping Channels Fabricated by Nanoimprint Lithography;ECS Journal of Solid State Science and Technology;2019
2. Applications of nanoimprint lithography/hot embossing: a review;Applied Physics A;2015-07-01
3. Ion-Sensitive Field-Effect Transistors With Periodic-Groove Channels Fabricated Using Nanoimprint Lithography;IEEE Electron Device Letters;2013-04
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