Mechanism and enhancement of the near-threshold low OFF-state breakdown voltage in gallium nitride high electron mobility transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/58/i=SC/a=SCCD01/pdf
Reference32 articles.
1. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
2. Breakdown mechanisms in AlGaN/GaN HEMTs: An overview
3. Punch-through in short-channel AlGaN/GaN HFETs
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of Acceptor Traps in GaN Buffer Layer on Source/Drain Contact Resistance in AlGaN/GaN High Electron Mobility Transistors;physica status solidi (a);2024-07
2. A Review on Reverse-Bias Leakage Current Transport Mechanisms in Metal/GaN Schottky Diodes;Transactions on Electrical and Electronic Materials;2024-02-03
3. Relative effectiveness of high-k passivation and gate-connected field plate techniques in enhancing GaN HEMT breakdown;Microelectronics Reliability;2020-07
4. Analysis of the Significant Rise in Breakdown Voltage of GaN HEMTs From Near-Threshold to Deep Off-State Gate Bias Conditions;IEEE Transactions on Device and Materials Reliability;2019-12
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