Reducing the grain density in semipolar (11-22) AlGaN surfaces on m-plane sapphire substrates

Abstract

Abstract The growth mechanisms during metalorganic vapor phase epitaxy (11-22) oriented Al x Ga1-x N with x ∼ 0.80 on m-plane sapphire are studied with the intention of mitigating the expansion of misoriented grains, composed of the (1-10-3) crystal orientation and achieving a flat surface with only the (11-22) orientation. An increase in reactor pressure, metalorganic supply, and V/III ratio led to a decrease in the grain density from 1.0 × 109 cm−2 to 1.5 × 107 cm−2. By comparing different growth regimes, we found that the main factor suppressing the growth of the (1-10-3) orientation and decreasing the grain density in the AlGaN layers is the growth rate, which decreased with increasing reactor pressure, MO supply, and V/III ratio due to increasing pre-reactions in the gas phase. To mitigate pre-reactions even with lower growth rates, growth conditions with higher total flow and lower TMAl flow were chosen, yielding low growth rates of 0.13 μm h−1 and a grain density of 3.0 × 107 cm−2 at an aluminum mole fraction of 84%. To allow the growth of thick LED heterostructures we demonstrated that such a buffer can be overgrown with higher growth rate AlGaN, yielding a low grain density of 1.0 × 106 cm−2 and a smooth morphology with a rms roughness of 2.5 nm by avoiding misoriented crystal propagation during nucleation.