Local and anisotropic strain in AlN film on sapphire observed by Raman scattering spectroscopy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.7567/1347-4065/ab0d07/pdf
Reference42 articles.
1. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
2. Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells
3. Phonon frequencies of a highly strained AlN layer coherently grown on 6H-SiC (0001)
4. Properties of GaN and related compounds studied by means of Raman scattering
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