Phonon frequencies of a highly strained AlN layer coherently grown on 6H-SiC (0001)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4974500
Reference25 articles.
1. Carrier Gas Dependence at Initial Processes fora-Plane AlN Growth onr-Plane Sapphire Substrates by Hydride Vapor Phase Epitaxy
2. Vertical strain and doping gradients in thick GaN layers
3. Growth Characteristics of AlGaN/GaN HEMTs on Patterned Si (111) Substrates Using Double AlN Interlayers by MOCVD
4. Influence of deep-pits on the device characteristics of metal-organic chemical vapor deposition grown AlGaN/GaN high-electron mobility transistors on silicon substrate
5. Properties of GaN and related compounds studied by means of Raman scattering
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1. Deep‐Ultraviolet Luminescence Properties of AlN;physica status solidi (RRL) – Rapid Research Letters;2024-03-17
2. Effect of MOVPE growth conditions on AlN films on annealed sputtered AlN templates with nano-striped patterns;Journal of Crystal Growth;2021-09
3. Coherent strain evolution at the initial growth stage of AlN on SiC(0001) proved by in situ synchrotron X-ray diffraction;Applied Physics Express;2020-04-08
4. Local and anisotropic strain in AlN film on sapphire observed by Raman scattering spectroscopy;Japanese Journal of Applied Physics;2019-05-09
5. White light emission from Er, Pr co-doped AlN films;Chinese Optics Letters;2019
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