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4.9 kV breakdown voltage vertical GaN p–n junction diodes with high avalanche capability

  • Published:2019-04-16 Issue:SC Volume:58 Page:SCCD03
  • ISSN:0021-4922
  • Container-title:Japanese Journal of Applied Physics
  • language:
  • Short-container-title:Jpn. J. Appl. Phys.

Author:

Ohta Hiroshi,Asai Naomi,Horikiri Fumimasa,Narita Yoshinobu,Yoshida Takehiro,Mishima Tomoyoshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 44 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Suppressing Carbon Incorporation in Metal–Organic Chemical Vapor Deposition GaN Using High‐Offcut‐Angled Substrates;physica status solidi (RRL) – Rapid Research Letters;2023-11-08

2. Study of anode doping and avalanche in foundry compatible 1.2 kV vertical GaN PiN diodes;Applied Physics Express;2023-11-01

3. Trap characterization of high-growth-rate laser-assisted MOCVD GaN;Applied Physics Letters;2023-09-11

4. Vertical GaN Power Devices;2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2023-03-07

5. Characterization of magnesium channeled implantation layers in GaN(0001);Japanese Journal of Applied Physics;2023-02-27
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