Design points of ferroelectric field-effect transistors for memory and logic applications as investigated by metal-ferroelectric-metal–insulator–semiconductor gate stack structures using Hf0.5Zr0.5O2 films-Reference-Cited by-同舟云学术

Design points of ferroelectric field-effect transistors for memory and logic applications as investigated by metal-ferroelectric-metal–insulator–semiconductor gate stack structures using Hf0.5Zr0.5O2 films

Published:2019-08-23 Issue:SL Volume:58 Page:SLLB06
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Migita Shinji,Ota Hiroyuki,Toriumi Akira

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://iopscience.iop.org/article/10.7567/1347-4065/ab389b/pdf

Reference74 articles.

1. Physics of the ferroelectric nonvolatile memory field effect transistor

2. Application of the ferroelectric materials to ULSI memories

3. Ferroelectric Field Effect Transistors for Memory Applications

4. Recent Progress of Ferroelectric-Gate Field-Effect Transistors and Applications to Nonvolatile Logic and FeNAND Flash Memory

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