Sapphire substrate off-angle and off-direction dependences on characteristics of AlGaN-based deep ultraviolet light-emitting diodes-Reference-Cited by-同舟云学术

Sapphire substrate off-angle and off-direction dependences on characteristics of AlGaN-based deep ultraviolet light-emitting diodes

Published:2019-05-17 Issue:SC Volume:58 Page:SC1025
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kojima Hisanori,Ogasawara Takuma,Kim Myunghee,Saito Yoshiki,Iida Kazuyoshi,Koide Norikatsu,Takeuchi Tetsuya,Iwaya Motoaki,Kamiyama Satoshi,Akasaki Isamu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

https://iopscience.iop.org/article/10.7567/1347-4065/ab1251/pdf

Reference31 articles.

1. Watt-Class High-Output-Power 365 nm Ultraviolet Light-Emitting Diodes

2. Origin of exciton emissions from an AlN p-n junction light-emitting diode

3. Characterization of Threading Dislocations in PVT-Grown AlN Substrates via x-Ray Topography and Ray Tracing Simulation

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