High-performance n-channel polycrystalline germanium thin-film transistors via continuous-wave laser crystallization and green nanosecond laser annealing for source and drain dopant activation-Reference-Cited by-同舟云学术

High-performance n-channel polycrystalline germanium thin-film transistors via continuous-wave laser crystallization and green nanosecond laser annealing for source and drain dopant activation

Published:2019-04-26 Issue:SD Volume:58 Page:SDDE02
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Li Yi-Shao^ORCID,Liang Hao-Hsiang,Wu Chun-Yi,Huang Wen-Hsien,Luo Jun-Dao^ORCID,Chuang Kai-Chi^ORCID,Li Wei-Shuo,Cheng Huang-Chung

Funder

Ministry of Science and Technology, Taiwan

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

https://iopscience.iop.org/article/10.7567/1347-4065/ab049a/pdf

Reference31 articles.

1. A very low temperature single crystal germanium growth process on insulating substrate using Ni-induced lateral crystallization for three-dimensional integrated circuits

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