Effect of post-deposition annealing on electrical properties and structures of aluminum oxide passivation film on a crystalline silicon substrate-Reference-Cited by-同舟云学术

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Effect of post-deposition annealing on electrical properties and structures of aluminum oxide passivation film on a crystalline silicon substrate

Published:2019-11-22 Issue:12 Volume:58 Page:125502
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Arafune Koji^ORCID,Kitano Sho,Yoshida Haruhiko,Ogura Atsushi,Hotta Yasushi

Funder

New Energy and Industrial Technology Development Organization

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://iopscience.iop.org/article/10.7567/1347-4065/ab50ec/pdf

Reference29 articles.

1. Comparison of ICP-AlOx and ALD-Al2O3 Layers for the Rear Surface Passivation of C-Si Solar Cells

2. Electronic charge trapping in chemical vapor‐deposited thin films of Al2O3 on silicon

3. Charge in SiO[sub 2]-Al[sub 2]O[sub 3] Double Layers on Silicon

4. Sequential surface chemical reaction limited growth of high quality Al2O3dielectrics

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Annealing Temperature on the Structure and Properties of La2O3 High-K Gate Dielectric Films Prepared by the Sol-Gel Method;Coatings;2023-06-12

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