Author:
Hirayama Masaki,Sugawa Shigetoshi
Abstract
Abstract
We investigated the effects of low-energy (<15 eV) ion bombardment on the properties of Al2O3 plasma-enhanced atomic layer deposition (ALD) films. High-flux ion bombardment caused interfacial mixing with underlying material of Si, and AlSiO
x
films were formed instead of Al2O3 films. The interfacially mixed AlSiO
x
films were selectively formed on single-crystal and amorphous Si surfaces, whereas normal ALD Al2O3 films were formed on SiO2 surfaces. The interfacially mixed AlSiO
x
films possessed thin (∼0.8 nm) SiO
x
interlayers and abrupt interfaces. The interfacial mixing synthesis has the potential to realize simultaneous area and topographically selective depositions in combination with selective etching.
Funder
Tokyo Electron Miyagi Ltd.
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by
4 articles.
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