High-Temperature Growth of GaN Single Crystals Using Li-Added Na-Flux Method-Reference-Cited by-同舟云学术

High-Temperature Growth of GaN Single Crystals Using Li-Added Na-Flux Method

Published:2012-12-01 Issue:12R Volume:51 Page:121002
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Honjo Masatomo,Imabayashi Hiroki,Takazawa Hideo,Todoroki Yuma,Matsuo Daisuke,Murakami Kosuke,Maruyama Mihoko,Imade Mamoru,Yoshimura Masashi,Sasaki Takatomo,Mori Yusuke

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference18 articles.

1. 9.4-W/mm Power Density AlGaN–GaN HEMTs on Free-Standing GaN Substrates

2. AlGaN/GaN HEMTs on free-standing GaN substrates: MBE growth and microwave characterization

3. Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy

4. Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)

5. Bulk GaN crystals grown by HVPE

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