Habit control during growth on GaN point seed crystals by Na-flux method-Reference-Cited by-同舟云学术

Habit control during growth on GaN point seed crystals by Na-flux method

Published:2016-11-02 Issue:1S Volume:56 Page:01AD01
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Honjo Masatomo,Imanishi Masayuki,Imabayashi Hiroki,Nakamura Kosuke,Murakami Kosuke,Matsuo Daisuke,Maruyama Mihoko,Imade Mamoru,Yoshimura Masashi,Mori Yusuke

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/56/i=1S/a=01AD01/pdf

Reference30 articles.

1. High-Power GaN P-N Junction Blue-Light-Emitting Diodes

2. High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior

3. GaN Substrates—Progress, Status, and Prospects

4. Bulk GaN crystals grown by HVPE

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