Large-Scale Test Circuits for High-Speed and Highly Accurate Evaluation of Variability and Noise in Metal–Oxide–Semiconductor Field-Effect Transistor Electrical Characteristics-Reference-Cited by-同舟云学术

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Large-Scale Test Circuits for High-Speed and Highly Accurate Evaluation of Variability and Noise in Metal–Oxide–Semiconductor Field-Effect Transistor Electrical Characteristics

Published:2011-10-01 Issue:10R Volume:50 Page:106701
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kumagai Yuki,Abe Kenichi,Fujisawa Takafumi,Watabe Shunichi,Kuroda Rihito,Miyamoto Naoto,Suwa Tomoyuki,Teramoto Akinobu,Sugawa Shigetoshi,Ohmi Tadahiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference50 articles.

1. Characterisation and modeling of mismatch in MOS transistors for precision analog design

2. Limitation of CMOS supply-voltage scaling by MOSFET threshold-voltage variation

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. [Papers] Impacts of Random Telegraph Noise with Various Time Constants and Number of States in Temporal Noise of CMOS Image Sensors;ITE Transactions on Media Technology and Applications;2018

2. Introduction of Atomically Flattening of Si Surface to Large-Scale Integration Process Employing Shallow Trench Isolation;ECS Journal of Solid State Science and Technology;2015-11-24

3. Stress induced leakage current generated by hot-hole injection;Microelectronic Engineering;2013-09

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