Numerical Analysis of Buffer-Trap Effects on Gate Lag in AlGaN/GaN High Electron Mobility Transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference24 articles.
1. GaN-Based RF Power Devices and Amplifiers
2. Trapping effects in GaN and SiC microwave FETs
3. Numerical Analysis of Slow Current Transients and Power Compression in GaAs FETs
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1. Effect of InGaN Channel on Radio‐Frequency Performance in High‐Electron‐Mobility Transistors with an InAlGaN Barrier;physica status solidi (a);2022-05-29
2. Similarities of lag phenomena and current collapse in field-plate AlGaN/GaN HEMTs with different types of buffer layers;Microelectronics Reliability;2017-06
3. Insulated gate and surface passivation structures for GaN-based power transistors;Journal of Physics D: Applied Physics;2016-09-07
4. Effect of chemical mechanical treatment on the optoelectronic properties in CMOS image sensor;Korean Journal of Chemical Engineering;2015-01-21
5. Increase in breakdown voltage of AlGaN/GaN HEMTs with a high-kdielectric layer;physica status solidi (a);2014-02-19
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