SiC trench MOSFET with self‐biased p‐shield for low R ON‐SP and low OFF‐state oxide field-Reference-Cited by-同舟云学术

SiC trench MOSFET with self‐biased p‐shield for low R ON‐SP and low OFF‐state oxide field

Author:

Zhang Meng¹,Wei Jin²,Jiang Huaping³⁴,Chen Kevin J.²,Cheng Ching‐Hsiang¹

Affiliation:

1. Department of Industrial and Systems EngineeringThe Hong Kong Polytechnic UniversityKowloonHong Kong

2. Department of Electric and Computer EngineeringThe Hong Kong University of Science and TechnologyKowloonHong Kong

3. Dynex Semiconductor LtdLincolnLN6 3LFUK

4. Zhuzhou CRRC Times Electric Co. LtdZhuzhou412001People's Republic of China

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

Reference25 articles.

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2. Characterization, Analysis, and Failure Investigation of SiC Materials and Power Devices;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27