Investigation of SiC trench MOSFET with floating islands-Reference-Cited by-同舟云学术

Investigation of SiC trench MOSFET with floating islands

Published:2016-10 Issue:13 Volume:9 Page:2492-2499
ISSN:1755-4543
Container-title:IET Power Electronics
language:en
Short-container-title:IET Power Electronics

Author:

Qingwen Song¹²,Xiaoyan Tang¹,Yimeng Zhang¹,Yuming Zhang¹,Yimen Zhang¹

Affiliation:

1. School of MicroelectronicsKey Laboratory of Wide Band‐Gap Semiconductor Materials and DevicesXidian UniversityXi'an710071People's Republic of China

2. School of advanced materials and nanotechnologyXidian UniversityXi'an710071People's Republic of China

Funder

National Natural Science Foundation of China

China Scholarship Council

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-pel.2015.0600

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4. 2013 European Solid‐State Device Research Conf. Bucharest Romania T. Kimoto Ultrahigh‐voltage SiC devices for future power infrastructure 22 29

5. Electrical performance of Al2O3 gate dielectric films deposited by atomic layer deposition on 4H‐SiC;Tanner C.M.;Appl. Phys. Lett.,2007

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