Method to improve trade‐off performance for split‐gate power U‐shape metal‐oxide semiconductor field‐effect transistor with compound trench dielectrics-Reference-Cited by-同舟云学术

Method to improve trade‐off performance for split‐gate power U‐shape metal‐oxide semiconductor field‐effect transistor with compound trench dielectrics

Published:2014-08 Issue:8 Volume:7 Page:2030-2034
ISSN:1755-4543
Container-title:IET Power Electronics
language:en
Short-container-title:IET Power Electronics

Author:

Ying Wang¹,Hao Lan¹,Zheng Dou¹,Haifan Hu¹

Affiliation:

1. College of Information and Communication EngineeringHarbin Engineering UniversityHarbin150001People's Republic of China

Funder

National Natural Science Foundation of China

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-pel.2013.0786

Reference22 articles.

1. A New Method to Improve Tradeoff Performance for Advanced Power MOSFETs

2. 1979 IEDM Techniques Digest J. Appels H. Vaes High voltage thin layer devices (RESURF devices) 238 241

3. 2000 Proc. ISPSD & ICs France A.W. Ludikhuize A review of RESURF technology 11 18

4. ChenX.‐B.: U.S. Patent 5216275 1993

5. CoeD.J.: U.S. Patent 4 754 310 1988

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