Author:
Chen Runze,Wang Lixin,Jiu Naixia,Zhang Hongkai,Guo Min
Abstract
In this study, a split-gate resurf stepped oxide with a floating electrode (FSGRSO) UMOSFET has been proposed. The source in the trench is divided into two electrodes, namely: the upper electrode and the lower electrode. The upper one is the floating electrode, which redistributes the electric potential vertically, and improves the breakdown voltage and figure of merit (FOM). The breakdown (BV) and FOM of the FSGRSO UMOSFET have been improved up to 27.3% and 62.7%, respectively, compared with the SGRSO UMOSFET, according to the simulation results.
Subject
Electrical and Electronic Engineering,Computer Networks and Communications,Hardware and Architecture,Signal Processing,Control and Systems Engineering
Cited by
2 articles.
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