Experimental verification of barrier height temperature dependence in GaAs planar doped barrier diodes
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20030205?crawler=true&mimetype=application/pdf
Reference6 articles.
1. Planar-doped barriers in GaAs by molecular beam epitaxy
2. Temperature dependent barrier heights in bulk unipolar diodes leading to improved temperature stable performance
3. Sze, S.M.: ‘Physics of semiconductor devices’, (Wiley, New York 1981)
4. Spill‐over effects in planar doped barrier devices
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