Experimental verification of barrier height temperature dependence in GaAs planar doped barrier diodes

Author:

Van Tuyen V.,Nadia F.,Hu Zhirun,Rezazadeh A.A.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. MMIC GaAs Power Limiter on 30 GHz with a Small Flat Leakage Power;2023 IEEE XVI International Scientific and Technical Conference Actual Problems of Electronic Instrument Engineering (APEIE);2023-11-10

2. Investigating effect of temperature on barrier height of PWB diodes;Electronics Letters;2018-01

3. High tangential signal sensitivity GaAs planar doped barrier diodes for microwave/millimeter-wave power detector applications;IEEE Microwave and Wireless Components Letters;2005-03

4. High voltage sensitivity GaAs planar doped barrier diodes for microwave∕millimetre-wave zero-bias power detector applications;Electronics Letters;2004

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