Investigating effect of temperature on barrier height of PWB diodes

Author:

Akura M.1ORCID,Dunn G.M.2

Affiliation:

1. School of Engineering, Meston walk, Kings CollegeUniversity of AberdeenAberdeenAB24 3UEUnited Kingdom

2. School of Natural and Computing Sciences, Meston walk, Kings CollegeUniversity of AberdeenAberdeenAB24 3UEUnited Kingdom

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Reference6 articles.

1. Potential well barrier diodes for submillimetre‐wave and high frequency applications;Akura M.;Electron Devices Lett.,2017

2. GaAs/AlGaAs potential well barrier diodes: novel diode for detector and mixer applications;Akura M.;Phys. Status Sol. A,2017

3. A hybrid planar‐doped potential well barrier diode for detector applications;Akura M.;Trans. on Electron Device,2017

4. Planar doped barriers in GaAs by molecular beam epitaxy;Malik R.J.;Electron. Lett.,1980

5. Experimental verification of barrier height temperature dependence in a GaAs planar doped barrier diode;Tuyen V.V.;Electron. Lett.,2003

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