Investigating effect of temperature on barrier height of PWB diodes
Author:
Affiliation:
1. School of Engineering, Meston walk, Kings CollegeUniversity of AberdeenAberdeenAB24 3UEUnited Kingdom
2. School of Natural and Computing Sciences, Meston walk, Kings CollegeUniversity of AberdeenAberdeenAB24 3UEUnited Kingdom
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2017.3353
Reference6 articles.
1. Potential well barrier diodes for submillimetre‐wave and high frequency applications;Akura M.;Electron Devices Lett.,2017
2. GaAs/AlGaAs potential well barrier diodes: novel diode for detector and mixer applications;Akura M.;Phys. Status Sol. A,2017
3. A hybrid planar‐doped potential well barrier diode for detector applications;Akura M.;Trans. on Electron Device,2017
4. Planar doped barriers in GaAs by molecular beam epitaxy;Malik R.J.;Electron. Lett.,1980
5. Experimental verification of barrier height temperature dependence in a GaAs planar doped barrier diode;Tuyen V.V.;Electron. Lett.,2003
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Hot electron effects on the operation of potential well barrier diodes;Journal of Semiconductors;2019-12-01
2. Investigating the Role of Band Offset on the Property and Operation of the Potential Well Barrier Diodes;physica status solidi (b);2019-01-09
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