Effect of varying Indium concentration of InGaAs channel on device and circuit performance of nanoscale double gate heterostructure MOSFET
Author:
Affiliation:
1. ECE DepartmentMCKV Institute of EngineeringLiluahWest BengalIndia
2. ECE DepartmentKalyani Government Engineering CollegeKalyaniWest BengalIndia
3. Nano Device Simulation LaboratoryETCE DepartmentJadavpur UniversityKolkataWest BengalIndia
Publisher
Institution of Engineering and Technology (IET)
Subject
Condensed Matter Physics,General Materials Science,Biomedical Engineering,Bioengineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/mnl.2017.0884
Reference25 articles.
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3. Comparative analysis of the DC performance of DG MOSFETs on highly-doped and near-intrinsic silicon layers
4. Implementation and characterization of the double-gate mosfet using lateral solid-phase epitaxy
5. Enhancement-Mode GaAs MOSFETs With an $\hbox{In}_{0.3} \hbox{Ga}_{0.7}\hbox{As}$ Channel, a Mobility of Over 5000 $ \hbox{cm}^{2}/\hbox{V} \cdot \hbox{s}$, and Transconductance of Over 475 $\mu\hbox{S}/\mu\hbox{m}$
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