200°C/5 MHz GaN‐based gate driver circuits with 1 nF/4.7 Ω RC load for high‐temperature high‐frequency all‐GaN IC applications
Author:
Affiliation:
1. Microsystem and Terahertz Research CenterChina Academy of Engineering PhysicsChengdu610200People's Republic of China
Funder
Science Challenge Project
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2020.1603
Reference6 articles.
1. TsaiC.WangY.KwanM.et al.: ‘Smart GaN platform: performance & challenges’.IEDM Tech. Dig. San Francisco CA USA 2017 pp.33.1.1–33.1.4 doi: 10.1109/IEDM.2017.8268488
2. KinzerD.: ‘GaN power IC technology: past present and future’.Proc. Int. Symp. on Power Semiconductor Devices ICs Sapporo Japan June 2017 pp.19–24 doi:10.23919/ISPSD.2017.7988981
3. TangG.KwanM.ZhangZ.et al.: ‘High‐speed high‐reliability GaN power device with integrated gate driver’.Proc. Int. Symp. on Power Semiconductor Devices ICs Chicago USA May 2018 pp.76–79 doi:10.1109/ISPSD.2012.6229067
4. LiX.AmirifarN.GeensK.et al.: ‘GaN‐on‐SOI: monolithically integrated all‐GaN ICs for power conversion’.IEDM Tech. Dig. 2019 pp.4.4.1–4.4.4 doi:10.1109/IEDM19573.2019.8993572
5. Monolithic GaN Half-Bridge Stages With Integrated Gate Drivers for High Temperature DC-DC Buck Converters
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