GaN power IC technology: Past, present, and future
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx7/7981281/7988866/07988981.pdf?arnumber=7988981
Cited by 48 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electrical Properties of GaN/Ga2O3 P-N Junction Diodes: A TCAD Study;Journal of Technical Education Science;2024-08-28
2. Threshold voltage modulation on a CTL-based monolithically integrated E/D-mode GaN inverters platform with improved voltage transfer performance;Applied Physics Letters;2024-07-15
3. Charge trapping layer enabled high-performance E-mode GaN HEMTs and monolithic integration GaN inverters;Applied Physics Letters;2024-06-10
4. Synergistic effect of abrasive friction and glycine on improving chemical mechanical polishing performance of single-crystal GaN substrate;Ceramics International;2024-06
5. A Quad-Slope 70V GaN Gate Driver with Integrated Three-Mode Level Shifter for Enhanced Negative Voltage Tolerance, dV/dt Detection and Double-Edge Self-Triggered Delay Compensation;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25
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