GaAs passivation by low-frequency plasma-enhanced chemical vapour deposition of silicon nitride
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20045328?crawler=true&mimetype=application/pdf
Reference7 articles.
1. Ammonia plasma passivation of GaAs in downstream microwave and radio-frequency parallel plate plasma reactors
2. Stable gallium arsenide MIS capacitors and MIS field effect transistors by (NH/sub 4/)/sub 2/S/sub x/ treatment and hydrogenation using plasma deposited silicon nitride gate insulator
3. Silicon nitride/(NH4)2Sx passivation of n-GaAs to unpin the Fermi level
4. Frequency effects and properties of plasma deposited fluorinated silicon nitride
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1. Experimental demonstration of the strong impact of plasma excitation frequency range on electronic properties of silicon nitride/GaAs interfaces;Surfaces and Interfaces;2023-08
2. Study of electrical properties of Al/Si3N4/n-GaAs MIS capacitors deposited at low and high frequency PECVD;The European Physical Journal Applied Physics;2022
3. Suppression of Surface Leakage Currents in InAs Avalanche Photodiodes via Sputtering of High-k Dielectric Layers;IEEE Transactions on Electron Devices;2020-10
4. Mechanisms of GaAs surface passivation by a one-step dry process using low-frequency plasma enhanced chemical deposition of silicon nitride;Microelectronic Engineering;2020-09
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