Epitaxial growth on InP substrates etched with methane reactive ion etching technique-Reference-Cited by-同舟云学术

Epitaxial growth on InP substrates etched with methane reactive ion etching technique

Published:1989 Issue:18 Volume:25 Page:1257
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Henry L.,Vaudry C.,le Corre A.,Lecrosnier D.,Alnot P.,Olivier J.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19890843?crawler=true&mimetype=application/pdf

Reference8 articles.

1. Niggebruge, U., Klug, M., and Garus, G.: ‘A novel process for reactive ion etching of InP using CH4/H2’, GaAs and related compounds, Karuizawa, Japan, Karuizawa, Japan 1985)

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