Sidewall and surface induced damage comparison between reactive ion etching and inductive plasma etching of InP using a CH4/H2/O2 gas mixture-Reference-Cited by-同舟云学术

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Sidewall and surface induced damage comparison between reactive ion etching and inductive plasma etching of InP using a CH4/H2/O2 gas mixture

Published:1996-05 Issue:3 Volume:14 Page:1056-1061
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Etrillard J.,Héliot F.,Ossart P.,Juhel M.,Patriarche G.,Carcenac P.,Vieu C.,Puech M.,Maquin P.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.580133

Cited by 39 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical and electrical evaluation methods of plasma-induced damage in InP substrates;Japanese Journal of Applied Physics;2024-06-03

2. Recent Advances in Reactive Ion Etching and Applications of High-Aspect-Ratio Microfabrication;Micromachines;2021-08-20

3. Reactive ion etching of PbSe thin films in CH4/H2/Ar plasma atmosphere;Materials Science in Semiconductor Processing;2021-03

4. Mechanical stress in InP and GaAs ridges formed by reactive ion etching;Journal of Applied Physics;2020-12-14

5. Mechanical Stress in InP Structures Etched in an Inductively Coupled Plasma Reactor with Ar/Cl2/CH4 Plasma Chemistry;Journal of Electronic Materials;2018-02-26

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