Silicon direct bonding technology employing a regularly grooved surface-Reference-Cited by-同舟云学术

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Silicon direct bonding technology employing a regularly grooved surface

Published:1995-11-09 Issue:23 Volume:31 Page:2047-2048
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:

Author:

Kim E.D.,Kudryavtseva T.V.,Argunova T.V.,Kostina L.S.,Kim S.C.,Grekhov I.V.,Kim N.K.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19951373?crawler=true&mimetype=application/pdf

Reference5 articles.

1. Low‐Temperature Preparation of Silicon/Silicon Interfaces by the Silicon‐to‐Silicon Direct Bonding Method

2. Void elimination by lateral gap diffusion in silicon direct bonding (SDB) technology

3. Kingery, W.D.: ‘Introduction to Ceramics’, et al. (John Wiley & Sons New York 1976),4, 5 and 14,

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1. http://journal-spqeo.org.ua;Semiconductor Physics Quantum Electronics and Optoelectronics;2018-03-29

2. Emission intensity in the visible and IR spectral ranges from Si-based structures formed by direct bonding with simultaneous doping with erbium (Er) and europium (Eu);Semiconductors;2013-09

3. Si_{1-x}Ge_{x} Single Crystals Grown by the Czochralski Method: Defects and Electrical Properties;Acta Physica Polonica A;2013-08

4. Features of temperature dependence of contact resistivity in ohmic contacts on lappedn-Si;Journal of Applied Physics;2012-09-15

5. Structural and electrical properties of SiGe-on-insulator substrates fabricated by direct bonding;Semiconductors;2010-08

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