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Features of temperature dependence of contact resistivity in ohmic contacts on lappedn-Si

  • Published:2012-09-15 Issue:6 Volume:112 Page:063703
  • ISSN:0021-8979
  • Container-title:Journal of Applied Physics
  • language:en
  • Short-container-title:Journal of Applied Physics

Author:

Sachenko A. V.,Belyaev A. E.,Boltovets N. S.,Vinogradov A. O.,Kladko V. P.,Konakova R. V.,Kudryk Ya. Ya.,Kuchuk A. V.,Sheremet V. N.,Vitusevich S. A.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Features of the Formation of Ohmic Contacts to n+-InN;Ukrainian Journal of Physics;2019-01-30

2. http://journal-spqeo.org.ua;Semiconductor Physics Quantum Electronics and Optoelectronics;2018-03-29

3. The temperature dependence of the resistivity of ohmic contacts based on gallium arsenide and indium phosphide in the 4.2–300 K range;Technical Physics Letters;2016-06

4. On the ohmicity of Schottky contacts;Semiconductors;2016-06

5. Structural and electrical-physical properties of the ohmic contacts based on palladium to n+-n-n++-n+++-InP;Semiconductor Physics Quantum Electronics and Optoelectronics;2015-12-03
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