Practical model for low electric field direct-tunnelling current characteristics in nanometer-thick oxide films
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19991356?crawler=true&mimetype=application/pdf
Reference10 articles.
1. Tunneling from an Independent-Particle Point of View
2. Studies of tunnel MOS diodes II. Thermal equilibrium considerations
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4. Quantum-mechanical modeling of accumulation layers in MOS structure
5. Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's
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3. Analysis of direct tunneling for thin SiO2 film by Wentzel, Kramers, Brillouin method––considering tail of distribution function;Solid-State Electronics;2003-01
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