Si 1− x Ge x nanowire based metal‐semiconductor‐metal Schottky biristor: Design and sensitivity analysis-Reference-Cited by-同舟云学术

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Si 1− x Ge x nanowire based metal‐semiconductor‐metal Schottky biristor: Design and sensitivity analysis

Published:2021-04 Issue:8 Volume:15 Page:745-754
ISSN:1751-858X
Container-title:IET Circuits, Devices & Systems
language:en
Short-container-title:IET Circuits, Devices & Systems

Author:

Nr Shaleen¹,Singh Sangeeta¹,Kumar Pankaj¹

Affiliation:

1. Microelectronics and VLSI Lab National Institute of Technology Patna Patna India

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering,Control and Systems Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/cds2.12065

Reference27 articles.

1. Bistable resistor (biristor) - gateless silicon nanowire memory

2. On bistable behavior and open-base breakdown of bipolar transistors in the avalanche regime-modeling and applications

3. Highly endurable floating body cell memory: vertical biristor;Moon D.I.;International Electronics Devices Meeting,2012

4. Vertically Integrated Unidirectional Biristor

5. A Silicon Biristor With Reduced Operating Voltage: Proposal and Analysis

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Temperature-Dependent Electrical Characteristics of Silicon Biristor;Micromachines;2023-11-28

2. Ultrasensitive label-free electrical detection of charged biomolecules using a metal–semiconductor–metal Schottky silicon nanowire biristor;Journal of Computational Electronics;2021-11-30

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