Vertically Integrated Unidirectional Biristor-Reference-Cited by-同舟云学术

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Vertically Integrated Unidirectional Biristor

Published:2011-11 Issue:11 Volume:32 Page:1483-1485
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Moon Dong-Il,Choi Sung-Jin,Kim Sungho,Oh Jae-Sub,Kim Young-Su,Choi Yang-Kyu

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/6056714/06006507.pdf?arnumber=6006507

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Temperature-Dependent Electrical Characteristics of Silicon Biristor;Micromachines;2023-11-28

2. Capacitor-Less 4F DRAM Using Vertical InGaAs Junction for Ultimate Cell Scalability;IEEE Electron Device Letters;2022-11

3. Ultrasensitive label-free electrical detection of charged biomolecules using a metal–semiconductor–metal Schottky silicon nanowire biristor;Journal of Computational Electronics;2021-11-30

4. An Asymmetrically Doped Vertical Si Biristor With Sub-1-V Operation;IEEE Transactions on Electron Devices;2021-08

5. Gateless and Capacitorless Germanium Biristor with a Vertical Pillar Structure;Micromachines;2021-07-29

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