Affiliation:
1. School of Electronic Engineering, Kyonggi University, Suwon 16227, Republic of Korea
Abstract
In this study, we investigate the temperature-dependent electrical characteristics of bistable silicon resistors (biristors) at temperatures ranging from 275 to 400 K. The proposed biristor exhibits low latch voltages owing to the surface accumulation layer transistor concept. Moreover, the biristor was abruptly turned on and off by positive and negative feedback phenomena, respectively. As the temperature increased from 275 to 400 K, the latch-up voltage decreased from 2.131 to 1.696 V, while the latch-down voltage increased from 1.486 to 1.637 V. Mechanisms of temperature-dependent change in latch voltage were analyzed using energy band diagrams. This temperature-dependent analysis on silicon biristor can serve as blueprint for the contribution of stable operation.
Funder
National Research Foundation of Korea
Ministry of Trade, Industry and Energy
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Control and Systems Engineering
Reference24 articles.
1. A capacitor-less 1T-DRAM cell;Okhonin;IEEE Electron Device Lett.,2002
2. Biristor—Bistable Resistor Based on a Silicon Nanowire;Han;IEEE Electron Device Lett.,2010
3. BJT-Mode Endurance on a 1T-RAM Bulk FinFET Device;Aoulaiche;IEEE Electron Device Lett.,2010
4. Han, J.-W., and Choi, Y.-K. (2010, January 15–17). Bistable resistor (biristor)—Gateless silicon nanowire memory. Proceedings of the 2010 Symposium on VLSI Technology, Honolulu, HI, USA.
5. A Bandgap-Engineered Silicon-Germanium Biristor for Low-Voltage Operation;Moon;IEEE Trans. Electron Devices,2014