Author:
Ambridge T.,Heckingbottom R.,Bell E.C.,Sealy B.J.,Stephens K.G.,Surridge R.K.
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Cited by
26 articles.
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1. N-type Doping Strategies for InGaAs;Materials Science in Semiconductor Processing;2017-05
2. WITHDRAWN: N-type doping strategies for InGaAs;Materials Science in Semiconductor Processing;2017-01
3. Review—Dopant Selection Considerations and Equilibrium Thermal Processing Limits for n+-In0.53Ga0.47As;ECS Journal of Solid State Science and Technology;2016
4. Co-implantation of Al+, P+, and S+ with Si+ implants into In0.53Ga0.47As;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-09
5. Direct measurement of CAsin group III+C coimplanted GaAs;Journal of Applied Physics;1994-04-15