Low resistivity layers and Schottky contacts in amorphous silicon by Co+ implantation-Reference-Cited by-同舟云学术

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Low resistivity layers and Schottky contacts in amorphous silicon by Co+ implantation

Published:1998 Issue:25 Volume:34 Page:2441
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Gwilliam R.M.,Hutchinson S.,Shannon J.M.,Emerson N.G.,Sealy B.J.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19981658?crawler=true&mimetype=application/pdf

Reference4 articles.

1. Andoh, Y., and Matsuda, K.: ‘Ion implantation technology’, Downey, D.F., Farley, M., Jones, K.S., Ryding, G., 92, (Elsevier 1993), p. 661–666

2. Resistivity of ion beam synthesised CoSi2

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Screen printed phosphorus diffusion for low-cost and simplified industrial mono-crystalline silicon solar cells;Solar Energy Materials and Solar Cells;2011-01

2. Ion beam synthesis of low resistivity contacts in amorphous silicon-based materials;Journal of Electronic Materials;2001-02

3. Electrical and optical properties of Co+ ion implanted a-Si1−xCx:H alloys;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-04

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