Electrical and optical properties of Co+ ion implanted a-Si1−xCx:H alloys-Reference-Cited by-同舟云学术

Electrical and optical properties of Co+ ion implanted a-Si1−xCx:H alloys

Published:2000-04 Issue:4 Volume:160 Page:505-509
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Emerson N.G,Gwilliam R.M,Shannon J.M,Jeynes C,Sealy B.J,Tsvetkova T,Tzenov N,Tzolov M,Dimova-Malinovska D

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference11 articles.

1. Amorphous and Microcrystalline Semiconductor Devices;Kanicki,1991

2. J.F. Ziegler, in: Ion Implantation Academic Press, New York, 1988

3. Mesotaxy: Single‐crystal growth of buried CoSi2layers

4. S. Hutchinson, M. Finney, K.J. Reeson, M.A. Harry, R.M. Gwilliam, B.J. Sealy, in: S. Coffa et al. (Eds.), Ion Implantation Technology, Elsevier, Amsterdam, 1995, p. 934

5. B.J. Sealy, R.M. Gwilliam, C. Jeynes, J.M. Shannon, T. Tsvetkova, C. Angelov, D. Dimova-Malinovska, N. Tzenov, Vacuum, in press

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modification of the Optical and Structural Properties of a-Si1-XCX:H Films by Ion Implantation;Functional Properties of Nanostructured Materials;2006

2. Ion beam synthesis of low resistivity contacts in amorphous silicon-based materials;Journal of Electronic Materials;2001-02

3. Modification of the electronic properties of a-Si1-xCx:H by Fe+ ion implantation;MRS Proceedings;2000