Oxide breakdown in a metal-SiO2-Si capacitor: influence of the metal electrode
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
General Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/ip-g-2.1990.0073?crawler=true&mimetype=application/pdf
Reference26 articles.
1. Klein, N.: ‘Breakdown mechanisms of thermally grown silicon dioxide at high electric field’, Devine, R.A.B., The physics and technology of amorphous SiO2, (Plenum Press 1988), p. 443
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