Ionizing irradiation effect on the current-voltage characteristics of the metal/ultra-thin oxide/semiconductor structures
Author:
Publisher
EDP Sciences
Subject
Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials
Link
http://epjap.epj.org/10.1051/epjap:1999244/pdf
Reference34 articles.
1. K. Kassmi, Ph.D. thesis, University Paul Sabatier, Toulouse (1991).
2. Electrical characteristics of thin silica layers nitrided by LPCVD nitrogen doped silicon
3. Hot-carrier effects on interface-trap capture cross sections in MOSFETs as studied by charge pumping
4. Performance optimization of thin-gate-oxide MOSFETs
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1. Fowler-Nordheim current modeling of metal/ultra-thin oxide/semiconductor structures in the inversion mode, defects characterization;The European Physical Journal Applied Physics;2004-06-25
2. Modelling of the influence of charges trapped in the oxide on theI(Vg) characteristics of metal–ultra-thin oxide–semiconductor structures;Semiconductor Science and Technology;2004-06-02
3. Ageing of metal/ultra-thin oxide/semiconductor structures under Fowler–Nordheim current injection;Nanotechnology;2003-12-03
4. Fowler-Nordheim Current Oscillations Analysis of Metal/Ultra-Thin Oxide/Semiconductor Structures;physica status solidi (a);2000-12
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